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Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department57b31e16-6822-4298-af23-9b0f5eab4ef6
cris.virtualsource.department70ee43bf-b263-487f-bdb0-df7846101822
cris.virtualsource.departmenta45803a5-b606-480c-ab57-edea937174b4
cris.virtualsource.departmentd364847e-7839-48ce-8add-cc6833ea77fd
cris.virtualsource.department2863aafe-2687-40bc-9212-70c8fa296208
cris.virtualsource.department0973834c-dcd6-49d4-aa35-cd3e2c986a1c
cris.virtualsource.department31ca802c-546e-44ae-adf5-df0b15c79696
cris.virtualsource.department1cc71c73-35b6-4227-b7d2-1adf15254e6e
cris.virtualsource.orcid57b31e16-6822-4298-af23-9b0f5eab4ef6
cris.virtualsource.orcid70ee43bf-b263-487f-bdb0-df7846101822
cris.virtualsource.orcida45803a5-b606-480c-ab57-edea937174b4
cris.virtualsource.orcidd364847e-7839-48ce-8add-cc6833ea77fd
cris.virtualsource.orcid2863aafe-2687-40bc-9212-70c8fa296208
cris.virtualsource.orcid0973834c-dcd6-49d4-aa35-cd3e2c986a1c
cris.virtualsource.orcid31ca802c-546e-44ae-adf5-df0b15c79696
cris.virtualsource.orcid1cc71c73-35b6-4227-b7d2-1adf15254e6e
dc.contributor.authorPiotr Caban
dc.contributor.authorWlodek Strupinski
dc.contributor.authorJan Szmidt
dc.contributor.authorMarek Wojcik
dc.contributor.authorJaroslaw Gaca
dc.contributor.authorOzgur Kelekci
dc.contributor.authorDeniz Caliskan
dc.contributor.authorEkmel Ozbay
dc.date.accessioned2024-07-11T07:47:41Z
dc.date.available2024-07-11T07:47:41Z
dc.date.issued2011-01
dc.identifier.doi10.1016/j.jcrysgro.2010.09.058
dc.identifier.urihttps://acikarsiv.thk.edu.tr/handle/123456789/1989
dc.publisherElsevier BV
dc.relation.ispartofJournal of Crystal Growth
dc.relation.issn0022-0248
dc.titleEffect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC
dc.typejournal-article
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume315

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