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Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

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dc.contributor.authorO. Kelekci
dc.contributor.authorP. Tasli
dc.contributor.authorS.S. Cetin
dc.contributor.authorM. Kasap
dc.contributor.authorS. Ozcelik
dc.contributor.authorE. Ozbay
dc.date.accessioned2024-07-11T07:47:00Z
dc.date.available2024-07-11T07:47:00Z
dc.date.issued2012-11
dc.identifier.doi10.1016/J.CAP.2012.05.040
dc.identifier.urihttps://acikarsiv.thk.edu.tr/handle/123456789/1987
dc.publisherElsevier BV
dc.relation.ispartofCurrent Applied Physics
dc.relation.issn1567-1739
dc.titleInvestigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD
dc.typejournal-article
dspace.entity.typePublication
oaire.citation.issue6
oaire.citation.volume12

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