Piotr CabanWlodek StrupinskiJan SzmidtMarek WojcikJaroslaw GacaOzgur KelekciDeniz CaliskanEkmel Ozbay2024-07-112024-07-112011-0110.1016/j.jcrysgro.2010.09.058https://acikarsiv.thk.edu.tr/handle/123456789/1989Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiCjournal-article