Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers

O. KelekciS.B. LisesivdinS. OzcelikE. Ozbay2024-07-112024-07-112011-0410.1016/j.physb.2011.01.059https://acikarsiv.thk.edu.tr/handle/123456789/1990Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriersjournal-article