Publication: Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers
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Date
2011-04
Authors
O. Kelekci
S.B. Lisesivdin
S. Ozcelik
E. Ozbay
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier BV