Publication:
Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers

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cris.virtualsource.department3dd997f3-a35c-46b1-9da9-477c290782c0
cris.virtualsource.departmentd7778d74-2c81-47b4-9a67-8693b9709f95
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dc.contributor.authorO. Kelekci
dc.contributor.authorS.B. Lisesivdin
dc.contributor.authorS. Ozcelik
dc.contributor.authorE. Ozbay
dc.date.accessioned2024-07-11T07:48:04Z
dc.date.available2024-07-11T07:48:04Z
dc.date.issued2011-04
dc.identifier.doi10.1016/j.physb.2011.01.059
dc.identifier.urihttps://acikarsiv.thk.edu.tr/handle/123456789/1990
dc.publisherElsevier BV
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.issn0921-4526
dc.titleNumerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers
dc.typejournal-article
dspace.entity.typePublication
oaire.citation.issue8
oaire.citation.volume406

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